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SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

MOSFET P-CH 12V 12A PPAK SC70-6

SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

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Part No :

SIA413DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 12A PPAK SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
24013 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SIA413DJ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
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