MOSFET N-CH 550V 11A TO220SIS
Type | Description |
---|---|
Series: | π-MOSVII |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 550 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 630mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 25 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1350 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK7608-40B,118Rochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
FDPF10N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10A TO220F |
|
PSMN015-110P,127Nexperia |
MOSFET N-CH 110V 75A TO220AB |
|
STB10N95K5STMicroelectronics |
MOSFET N-CH 950V 8A D2PAK |
|
IPN60R2K0PFD7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3A SOT223 |
|
BUK9612-55B,118Nexperia |
MOSFET N-CH 55V 75A D2PAK |
|
IXFR40N90PWickmann / Littelfuse |
MOSFET N-CH 900V 21A ISOPLUS247 |
|
PH9030AL115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
DMPH4015SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CHANNEL 40V 11.4A 8SO |
|
STF2HNK60ZSTMicroelectronics |
MOSFET N-CH 600V 2A TO220FP |
|
NDD60N360U1-35GRochester Electronics |
MOSFET N-CH 600V 11A IPAK |
|
NTMS5835NLR2GRochester Electronics |
MOSFET N-CH 40V 9.2A 8SOIC |
|
EMH2801-TL-HRochester Electronics |
MOSFET P-CH 20V 3A 8EMH |