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TK12V60W,LVQ

TK12V60W,LVQ

MOSFET N-CH 600V 11.5A 4DFN

TK12V60W,LVQ

TK12V60W,LVQ

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Part No :

TK12V60W,LVQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 11.5A 4DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
069206 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
TK12V60W,LVQ PDF
Type Description
Series:DTMOSIV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):104W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-DFN-EP (8x8)
Package / Case:4-VSFN Exposed Pad
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