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SPP18P06PHXKSA1

SPP18P06PHXKSA1

MOSFET P-CH 60V 18.7A TO220-3

SPP18P06PHXKSA1

SPP18P06PHXKSA1

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Part No :

SPP18P06PHXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 18.7A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10898 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SPP18P06PHXKSA1 PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:-
Power Dissipation (Max):81.1W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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