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BSC159N10LSFGATMA1

BSC159N10LSFGATMA1

MOSFET N-CH 100V 9.4A/63A TDSON

BSC159N10LSFGATMA1

BSC159N10LSFGATMA1

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Part No :

BSC159N10LSFGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 9.4A/63A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
027402 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
BSC159N10LSFGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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