MOSFET N-CH 600V 4.1A/20A 4DFN
Type | Description |
---|---|
Series: | aMOS5™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 210mOhm @ 7.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1935 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 8.3W (Ta), 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 4-DFN-EP (8x8) |
Package / Case: | 4-PowerTSFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP65R150CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO220-3 |
|
IRFR8314TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 90A DPAK |
|
SIHFB11N50A-E3Vishay / Siliconix |
MOSFET N-CH 500V 11A TO220AB |
|
IPP057N08N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 80A TO220-3 |
|
IXTH110N25TWickmann / Littelfuse |
MOSFET N-CH 250V 110A TO247 |
|
FQP8P10Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 8A TO220-3 |
|
NTD5862N-1GRochester Electronics |
MOSFET N-CH 60V 98A DPAK |
|
STD9NM60NSTMicroelectronics |
MOSFET N-CH 600V 6.5A DPAK |
|
FDS2734Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 3A 8SOIC |
|
SI4630DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 40A 8SO |
|
TSM015NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 205A 8PDFN |
|
FDG313NRochester Electronics |
0.95A, 25V, N-CHANNEL, MOSFET |
|
STP10N95K5STMicroelectronics |
MOSFET N-CH 950V 8A TO220 |