MOSFET N-CH 60V 90A D2PAK
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.4mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 93µA |
Gate Charge (Qg) (Max) @ Vgs: | 79 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 13000 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 167W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFSL3806PBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
RJK0348DSP-00#J0Rochester Electronics |
MOSFET N-CH 30V 22A 8SOP |
|
SQM60N20-35_GE3Vishay / Siliconix |
MOSFET N-CH 200V 60A TO263 |
|
TSM10N80CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 9.5A TO220 |
|
IXTQ88N30PWickmann / Littelfuse |
MOSFET N-CH 300V 88A TO3P |
|
IRFU310BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS4H02NFT1GRochester Electronics |
MOSFET N-CH 25V 37A/193A 5DFN |
|
STB4NK60Z-1STMicroelectronics |
MOSFET N-CH 600V 4A I2PAK |
|
SIRA20BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 82A/335A PPAK |
|
STP21N90K5STMicroelectronics |
MOSFET N-CH 900V 18.5A TO220-3 |
|
IPZ40N04S5L7R4ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON |
|
PSMN017-30PL,127Nexperia |
MOSFET N-CH 30V 32A TO220AB |
|
HUF76629D3STRochester Electronics |
N-CHANNEL LOGIC LEVEL ULTRAFET P |