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IPBE65R099CFD7AATMA1

IPBE65R099CFD7AATMA1

MOSFET N-CH 650V 24A TO263-7

IPBE65R099CFD7AATMA1

IPBE65R099CFD7AATMA1

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Part No :

IPBE65R099CFD7AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 24A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
597059 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
Type Description
Series:Automotive, AEC-Q101, CoolMOS™ CFD7A
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2513 pF @ 400 V
FET Feature:-
Power Dissipation (Max):127W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3-10
Package / Case:TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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