MOSFET N-CH 100V 97A TO220AB
Type | Description |
---|---|
Series: | HEXFET®, StrongIRFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 97A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8.6mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 116 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4476 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 221W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STD5NM60T4STMicroelectronics |
MOSFET N-CH 600V 5A DPAK |
|
IXTA3N120-TRRWickmann / Littelfuse |
MOSFET N-CH 1200V 3A TO263 |
|
MMSF7N03HDR2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLUS3A18PZCTCGRochester Electronics |
MOSFET P-CH 20V 5.1A 6UDFN |
|
SISS71DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 100V 23A PPAK1212-8S |
|
IPLK70R750P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V TDSON-8 |
|
IRLR7807ZPBFRochester Electronics |
HEXFET POWER MOSFET |
|
AON6260Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 41A/85A 8DFN |
|
FDI150N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A I2PAK |
|
PH8230E,115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
APT58F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A ISOTOP |
|
FCP170N60Rochester Electronics |
MOSFET N-CH 600V 22A TO220-3 |
|
NTLUS3A18PZCTAGRochester Electronics |
MOSFET P-CH 20V 5.1A 6UDFN |