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TP65H480G4JSG-TR

TP65H480G4JSG-TR

GANFET N-CH 650V 3.6A 3PQFN

TP65H480G4JSG-TR

TP65H480G4JSG-TR

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Part No :

TP65H480G4JSG-TR

Manufacturer
Transphorm
Description
GANFET N-CH 650V 3.6A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10328 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:560mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id:2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:8 V @ 8 nC
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:400 V @ 760 pF
FET Feature:-
Power Dissipation (Max):13.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (5x6)
Package / Case:3-SMD, Flat Lead
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