MOSFET N-CH 30V 12A 8SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 542 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN3R3-80ES,127Rochester Electronics |
ELEMENT, NCHANNEL, SILICON, MOSF |
|
STF20NF20STMicroelectronics |
MOSFET N-CH 200V 18A TO220FP |
|
BTS282ZDELCORochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCP125N60ERochester Electronics |
MOSFET N-CH 600V 29A TO220-3 |
|
DMTH6016LFDFWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 9.4A 6UDFN |
|
SI4465ADY-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 8SOIC |
|
SQJ459EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 52A PPAK SO-8 |
|
FDD9410-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A DPAK |
|
NTMSD2P102R2Rochester Electronics |
MOSFET P-CH 20V 2.3A 8-SOIC |
|
NTD20P06LT4GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
AUIRF1010ZSRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IPB015N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 180A TO263-7 |
|
SIHH180N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A PPAK 8 X 8 |