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TPH3208LD

TPH3208LD

GANFET N-CH 650V 20A 4PQFN

TPH3208LD

TPH3208LD

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Part No :

TPH3208LD

Manufacturer
Transphorm
Description
GANFET N-CH 650V 20A 4PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
462846 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
PDF
TPH3208LD PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id:2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-PQFN (8x8)
Package / Case:4-PowerDFN
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