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SIB452DK-T1-GE3

SIB452DK-T1-GE3

MOSFET N-CH 190V 1.5A PPAK SC75

SIB452DK-T1-GE3

SIB452DK-T1-GE3

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Part No :

SIB452DK-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 190V 1.5A PPAK SC75
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10418 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SIB452DK-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):190 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:2.4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta), 13W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-75-6L Single
Package / Case:PowerPAK® SC-75-6L
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