MOSFET N-CH 600V 29A TO247AC
Type | Description |
---|---|
Series: | EF |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 102mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 53 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1804 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDZ7064SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RQ1E070RPTRROHM Semiconductor |
MOSFET P-CH 30V 7A TSMT8 |
|
BUK9509-40B,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.01OHM, 1- |
|
BSC889N03LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IMW120R060M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 36A TO247-3 |
|
IPW60R280C6Rochester Electronics |
MOSFET N-CH 600V 13.8A TO247-3 |
|
SPB02N60C3ATMA1Rochester Electronics |
MOSFET N-CH 650V 1.8A TO263-3 |
|
IPP60R360CFD7XKSA1IR (Infineon Technologies) |
MOSFET 600V TO220-3-1 |
|
SIJ186DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 23A/79.4A PPAK |
|
IXTP80N12T2Wickmann / Littelfuse |
MOSFET N-CH 120V 80A TO220AB |
|
IMZA65R072M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
NTLUF4189NZTBGRochester Electronics |
MOSFET N-CH 30V 1.2A 6UDFN |
|
IPA075N15N3GRochester Electronics |
IPA075N15 - 12V-300V N-CHANNEL P |