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SPB02N60C3ATMA1

SPB02N60C3ATMA1

MOSFET N-CH 650V 1.8A TO263-3

SPB02N60C3ATMA1

SPB02N60C3ATMA1

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Part No :

SPB02N60C3ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 1.8A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
36000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SPB02N60C3ATMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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