IC MEMORY NOR
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Memory Type: | - |
Memory Format: | - |
Technology: | - |
Memory Size: | - |
Memory Interface: | - |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | - |
Operating Temperature: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
EDF8164A3PD-GD-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 800MHZ |
|
THGBMHG6C1LBAW6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH MEM MMC 153FBGA |
|
S99FL132KMM40Cypress Semiconductor |
IC FLASH NOR |
|
S99GL256P0110Cypress Semiconductor |
IC FLASH |
|
MT52L256M64D2PD-107 WT ES:B TRMicron Technology |
IC DRAM 16GBIT 933MHZ 216FBGA |
|
7133LA35J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
MT44K32M36RB-083E:A TRMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
MT53D512M64D4CR-053 WT:DMicron Technology |
IC DRAM 32GBIT 1866MHZ FBGA |
|
CG8852AACypress Semiconductor |
IC MODULE BLUETOOTH 50VFBGA |
|
MT53B512M16D1Z11MWC1Micron Technology |
LPDDR4 8G DIE 512MX16 |
|
7007L35GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PGA |
|
MT29E512G08CUCDBJ6-6:DMicron Technology |
IC FLASH 512GBIT PAR 132LBGA |
|
CG7920AACypress Semiconductor |
MICROPOWER SRAMS |