IC DRAM 16GBIT 1600MHZ 200WFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 16Gb (512M x 32) |
Memory Interface: | - |
Clock Frequency: | 1.6 GHz |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | 1.1V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 200-WFBGA |
Supplier Device Package: | 200-WFBGA (11x14.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
MT53B384M64D4NK-062 XT:B TRMicron Technology |
IC DRAM 24GBIT 1600MHZ 366WFBGA |
![]() |
71V30S35TFI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
![]() |
CAT25128VIDSanyo Semiconductor/ON Semiconductor |
IC EEPROM 128KB SERIAL SPI 8TSSO |
![]() |
M50FLW040AK5GMicron Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
![]() |
P770011CF9C006Cypress Semiconductor |
IC FLASH MEM NOR |
![]() |
MT53D512M64D4NW-062 WT:D TRMicron Technology |
IC DRAM 32GBIT 1600MHZ 432VFBGA |
![]() |
AT25HP512W210SU2.7Roving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 16SOIC |
![]() |
S29GL064SSEI049Cypress Semiconductor |
IC FLASH 64MB FLASH NOR DIE |
![]() |
70V9359L12PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
![]() |
MT47H128M16RT-187E:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 84FBGA |
![]() |
MT29RZ4C8DZZMHAN-18W.80Y TRMicron Technology |
IC FLASH RAM 4GBIT PAR 533MHZ |
![]() |
MTFC64GJTDN-4M ITMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
![]() |
AK6506CTUAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 8KB SER SPI 8WLCSP |