IC DRAM 576MBIT PARALLEL 144UBGA
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 576Mb (64M x 9) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 20 ns |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 144-TFBGA |
Supplier Device Package: | 144-µBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
7133SA25PFIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
24CS512-I/PRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
7133LA90J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
M29W800DT45N6F TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MTFC32GJVED-IT TRMicron Technology |
IC FLASH 256GBIT MMC 169VFBGA |
|
S99NS512RCypress Semiconductor |
IC GATE NOR |
|
M29W640GT70ZA6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
MT29C4G48MAYBBAHK-48 AITMicron Technology |
IC FLASH RAM 4GBIT PAR 137VFBGA |
|
S29WS128N0PBFW013Cypress Semiconductor |
IC MEMORY NOR |
|
AS4C512M8D3B-12BANTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT29F256G08EBCAGB16A3WC1-MMicron Technology |
TLC 256G DIE 32GX8 |
|
7143LA25JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
MT53D768M64D4SQ-046 WT:A TRMicron Technology |
LPDDR4 48G 768MX64 FBGA WT QDP |