







CRYSTAL 24.0000MHZ 12PF SMD
CRYSTAL 40.0000MHZ 11PF SMD
MEMS OSC XO 212.5000MHZ LVCMOS
IC DRAM 1GBIT PARALLEL 60FBGA
| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q100 |
| Package: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR2 |
| Memory Size: | 1Gb (128M x 8) |
| Memory Interface: | Parallel |
| Clock Frequency: | 400 MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 400 ps |
| Voltage - Supply: | 1.7V ~ 1.9V |
| Operating Temperature: | -40°C ~ 95°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 60-TFBGA |
| Supplier Device Package: | 60-FBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
MT41K1G4THV-15E:MMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
MT29F8G01ADBFD12-AATES:FMicron Technology |
IC FLASH 8GBIT SPI 24TPBGA |
|
|
S99-50287Cypress Semiconductor |
IC GATE NOR |
|
|
MT29F3T08EUHBBM4-3R:B TRMicron Technology |
IC FLASH 3TB PARALLEL 333MHZ |
|
|
MT53D2G32D8QD-053 WT ES:EMicron Technology |
LPDDR4 64G 1GX64 FBGA 8DP |
|
|
MT53B384M16D1NK-062 WT ES:BMicron Technology |
IC DRAM 6GBIT 1600MHZ FBGA |
|
|
N2M400HDB321A3CEMicron Technology |
IC FLASH 128GBIT MMC 100LBGA |
|
|
S29WS128N0SBAW013Cypress Semiconductor |
IC MEMORY NOR |
|
|
M25P40-VMB6TPB TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8UFDFPN |
|
|
S98WS512P00AW0012Cypress Semiconductor |
IC GATE NOR |
|
|
MT29F512G08CUCABH3-10:AMicron Technology |
IC FLASH 512GBIT PAR 100LBGA |
|
|
LE25FW056CS-FHSanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT |
|
|
M29W640GB60ZA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |