IC FLASH 256G PARALLEL 132VBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (TLC) |
Memory Size: | 256Gb (32G x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 333 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | 2.5V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 132-VBGA |
Supplier Device Package: | 132-VBGA (12x18) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CAT24C128WGERochester Electronics |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
E28F008S3150Rochester Electronics |
3 VOLT FLASHFILE MEMORY |
|
CG7099AMRochester Electronics |
SPECIAL |
|
MT41K256M8DA-125 AAT:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
CY7C1472V33-200AXCKJRochester Electronics |
SYNC RAM |
|
MT28EW512ABA1LPN-0SIT TRMicron Technology |
IC FLSH 512MBIT PARALLEL 56VFBGA |
|
MD27C64-20/BRochester Electronics |
64K (8K X 8) EPROM |
|
MT61K256M32JE-14:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 180FBGA |
|
CG7137AATRochester Electronics |
SPECIAL |
|
N93C66BT3ETAGSanyo Semiconductor/ON Semiconductor |
4KB MICROWIRE SER EEPROM |
|
IS61LF51218B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
MT40A2G16SKL-062E:BMicron Technology |
IC FLASH 32GBIT PARALLEL 96FBGA |
|
MT53D1024M32D4DT-046 AIT:D TRMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |