512M X 8, 1.35V, 800MHZ, DDR3-16
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | - |
Memory Format: | - |
Technology: | - |
Memory Size: | - |
Memory Interface: | - |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | - |
Operating Temperature: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT40A1G8Z11BWC1Micron Technology |
IC DRAM 8GBIT PARALLEL WAFER |
|
AS4C16M16SA-6BANTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
MT29F8T08GULBEM4:B TRMicron Technology |
QLC 8T 1TX8 LBGA 8DP |
|
5962-8852503ZARochester Electronics |
EEPROM, 32KX8, 250NS, PARALLEL |
|
MT53E2G32D4DT-046 WT ES:AMicron Technology |
LPDDR4 64G 2GX32 FBGA QDP |
|
FM93CS46EMT8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
5962-9161706MXARenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
R1EX24032ATAS0A#U0Rochester Electronics |
EEPROM, 4KX8, SERIAL |
|
CG7805AARochester Electronics |
SPECIAL |
|
W9864G2JH-6Winbond Electronics Corporation |
IC DRAM 64MBIT PAR 86TSOP II |
|
HMI-65262-9Rochester Electronics |
16K X 1 ASYNCHRONOUS CMOS SRAM |
|
7052S35GBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 108PGA |
|
S98FL01GSDSBHBC13Cypress Semiconductor |
FLASH MEMORY NOR |