IC SRAM 128KBIT PARALLEL 68PGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 128Kb (16K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 68-BPGA |
Supplier Device Package: | 68-PGA (29.46x29.46) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
7024L70GBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PGA |
![]() |
MT62F768M64D4EJ-031 WT ES:A TRMicron Technology |
LPDDR5 48G 768MX64 FBGA QDP |
![]() |
S25HS512TDSBHV010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
![]() |
FM25C020ULEMT8Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
![]() |
CP5789EMRochester Electronics |
8 BIT NEURON NETWORK PROCESSOR |
![]() |
CY100E422L-7DCQRochester Electronics |
STANDARD SRAM, 256X4, ECL100K |
![]() |
CAT24C04TDI-GT3Sanyo Semiconductor/ON Semiconductor |
EEPROM SERIAL I2C |
![]() |
CDM6264BCJ3Rochester Electronics |
8K X 8 ASYNCHRONOUS CMOS STATIC |
![]() |
70T3599S200BCGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
![]() |
MT40A512M16LY-062E:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
![]() |
FM25L16B-G3Rochester Electronics |
FRAM SERIAL MEMORY 2KX8 |
![]() |
5962-8861012ZARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
![]() |
CY62158DV30LL-70BVXIRochester Electronics |
SLOW 3.0V SUPER LOW POWER 512KX1 |