IC SRAM 4.5MBIT PARALLEL 119PBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, SDR |
Memory Size: | 4.5Mb (128K x 36) |
Memory Interface: | Parallel |
Clock Frequency: | 183 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 3.3 ns |
Voltage - Supply: | 3.135V ~ 3.465V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 119-BGA |
Supplier Device Package: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PC48F4400P0VB0EHMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
AT27C512R-70TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
IDT71V35761S200BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT47H64M8SH-25E AIT:H TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS43TR16512AL-15HBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
W25Q256FVBIG TRWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
IS42S32800B-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IDT71V25761YSA200BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS62WV12816BLL-55T-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
W25Q16DWUUIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
MR0A08BCSO35Everspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 32SOIC |
|
CY7C1518JV18-312BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
MT46V64M8P-6T:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |