ERL-07-23 150K 2% T-1 RLR07C1503
DIODE SCHOTTKY 30V 1A SOD323-2
IEC 60320 C13 OUTLET, IDC TERMIN
IC DRAM 1GBIT PARALLEL 96TWBGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3L |
Memory Size: | 1Gb (64M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 800 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 20 ns |
Voltage - Supply: | 1.283V ~ 1.45V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
70V3389S4PRF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
![]() |
IS45S32400B-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
![]() |
IDT71V3558S100BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
![]() |
7132LA25JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
![]() |
IS43TR16256A-093NBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
![]() |
NM93C06LEM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256B SPI 250KHZ 8SO |
![]() |
NAND512R3A2DZA6EMicron Technology |
IC FLSH 512MBIT PARALLEL 63VFBGA |
![]() |
R1RW0408DGE-2PR#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
![]() |
AT29C040A-90JCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
![]() |
AT24C01-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
![]() |
AT45DB161D-TURoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 66MHZ 28TSOP |
![]() |
W25Q256FVCIG TRWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
![]() |
IS25WQ020-JNLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI 104MHZ 8SOP |