IC EEPROM 512KBIT SPI 16SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 512Kb (64K x 8) |
Memory Interface: | SPI |
Clock Frequency: | 10 MHz |
Write Cycle Time - Word, Page: | 10ms |
Access Time: | - |
Voltage - Supply: | 2.7V ~ 5.5V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT48LC64M8A2P-75 L:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT48V8M32LFF5-10 IT TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
SST39LF020-45-4C-NHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IDT6116LA20SO8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
IDT71V3559S85PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61LF51236A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS42S32160D-6BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
N25W128A11EF740F TRMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
|
CAT28C64BLI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
IDT71V016SA15PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
R1EX24512BSAS0I#S0Renesas Electronics America |
IC EEPROM 512KBIT I2C 1MHZ 8SOP |
|
AT25640AY1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 20MHZ 8MAP |
|
MT29F256G08CMHGBJ4-3RES:G TRMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |