IC RAM 128KBIT PARALLEL 80TQFP
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | RAM |
Technology: | SARAM |
Memory Size: | 128Kb (8K x 16) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 20ns |
Access Time: | 20 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 80-LQFP |
Supplier Device Package: | 80-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JS28F160C3TD70AMicron Technology |
IC FLSH 16MBIT PARALLEL 48TSOP I |
|
AT49LV002N-12PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
N25Q256A83E1241FMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
IS42SM32160C-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
MT29F4G08ABAFAWP-ITES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
SST25PF040C-40E/MF18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WDFN |
|
MT46V32M8TG-75 IT:GMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
MT47H64M8CB-37E:BMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
W25Q16DWZPIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
SST26VF016BA-104I/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
IDT71V416L10BEIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
70V9279L9PRF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
R1EX24004ASAS0I#S0Renesas Electronics America |
IC EEPROM 4KBIT I2C 400KHZ 8SOP |