IC SRAM 18MBIT PARALLEL 100TQFP
Type | Description |
---|---|
Series: | NoBL™ |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, SDR |
Memory Size: | 18Mb (1M x 18) |
Memory Interface: | Parallel |
Clock Frequency: | 200 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 3 ns |
Voltage - Supply: | 3.135V ~ 3.6V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NM93C66ENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 1MHZ 8DIP |
|
IS61DDB41M36C-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT28F128J3BS-12 ETMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
RM24EP64B-BSNC-TAdesto Technologies |
IC CBRAM 64KBIT I2C 1MHZ 8SOIC |
|
MT28EW512ABA1HPC-1SITMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
IDT71V3559SA80BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT46V64M8BN-75 IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS61LPS102418A-200B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT28C16E-15SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
AS4C128M16D3LA-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT27C080-15RIRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32SOIC |
|
IS61VF102418A-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V3558SA200BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |