IC EEPROM 256KBIT PAR 28SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 256Kb (32K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 10ms |
Access Time: | 200 ns |
Voltage - Supply: | 2.7V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 28-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
W25Q64FVZPJQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
N25Q032A11ESE40F TRMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 8SO |
|
IDT71V424S10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
MT40A256M16GE-083E AUT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT28F400B5WG-8 T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |
|
70V35S25PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
IS42S83200B-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT48LC128M4A2TG-7E:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT46V64M8P-75Z:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MT28F800B5SG-8 BMicron Technology |
IC FLASH 8MBIT PARALLEL 44SOP |
|
MT48LC16M8A2P-75IT:GTRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C1518JV18-300BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT28C64E-12PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |