IC DRAM 512MBIT PAR 66TSOP II
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (64M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 200 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.3V ~ 2.7V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
93LC56B-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
AT25SF161-SHD-BAdesto Technologies |
IC FLASH 16MBIT SPI 104MHZ 8SOIC |
|
71V3577S85BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V2546S100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
34AA02-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
NM25C160EM8Rochester Electronics |
EEPROM, 2KX8, SERIAL, CMOS |
|
25LC128T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 10MHZ 8DFN |
|
SST25VF040B-50-4I-S2AERoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
71V3557S85BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
FM28V100-TGCypress Semiconductor |
IC FRAM 1MBIT PARALLEL 32TSOP I |
|
IS42S32400F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
FM24C08ULEM8Rochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
UPD44645184AF5-E33-FQ1Rochester Electronics |
72-MB DDR II+ SRAM (2M X 36-BIT) |