RES 43.7K OHM 1/4W .1% AXIAL
CAP CER 330PF 500V C0G/NP0 1812
IC DRAM 4GBIT PARALLEL 200VFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 4Gb (256M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 1.6 GHz |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 200-WFBGA |
Supplier Device Package: | 200-VFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AS7C31026B-10JCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
BR24G64FVT-3AGE2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 8TSSOPB |
|
IS49RL18320-107EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
IS42S16320D-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
93C56BT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ SOT23-6 |
|
IS45S32400F-6BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY62147DV30LL-70ZSXIRochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
|
AT28HC256E-12FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
|
CY62256VNLL-70ZXERochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
N25Q032A13ESC40GAlliance Memory, Inc. |
IC FLASH 32MBIT SPI 108MHZ 8SO |
|
AS4C64M16D1A-6TCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 66TSOP II |
|
MTFC4GMDEA-4M ITFlip Electronics |
IC FLASH 32GBIT MMC 153WFBGA |
|
UPD46364362BF1-E40Y-EQ1-ARochester Electronics |
DDR SRAM, 1MX36, 0.45NS |