IC FLASH 512MBIT PARALLEL 56FBGA
Type | Description |
---|---|
Series: | GL-S |
Package: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 110 ns |
Voltage - Supply: | 1.65V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-VFBGA |
Supplier Device Package: | 56-FBGA (9x7) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
93LC46CT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
AT28C010-20FM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PAR 32FLATPACK |
|
AT25DF512C-XMHN-TAdesto Technologies |
IC FLASH 512KBIT SPI 8TSSOP |
|
R1LV0216BSB-7SI#B0Rochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
93C76-E/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 2MHZ 8DIP |
|
71V3556SA100BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
R1EX24512ASAS0I#S0Rochester Electronics |
EEPROM, 64KX8, SERIAL |
|
CY7C199CN-12VXARochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT58L256V36PS-6Rochester Electronics |
CACHE SRAM, 256KX36, 3.5NS PQFP1 |
|
IS26KL512S-DABLA300Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
IS43TR16128D-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
71V416L15BEIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
71V3579S80PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |