IC DRAM 256MBIT PARALLEL 54TFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile |
Memory Size: | 256Mb (16M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 166 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 5.5 ns |
Voltage - Supply: | 1.7V ~ 1.95V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TFBGA |
Supplier Device Package: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT49H16M36SJ-25E:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
W25Q32JVZPIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
MX25L6433FXCI-08GMacronix |
IC FLSH 64MBIT SPI/QUAD 24CSPBGA |
|
70V3389S5BC8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
S25FL116K0XMFA011Flip Electronics |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
AT25PE20-MHN-TAdesto Technologies |
IC FLASH 2MBIT SPI 85MHZ 8UDFN |
|
W74M25JVZEIQWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
CY14B108N-ZSP45XIRochester Electronics |
IC NVSRAM 8MBIT PAR 54TSOP II |
|
7130LA20JG8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
M5M5V108DVP-70HISTRochester Electronics |
SRAM 3.3V 1M-BIT (128K X 8) |
|
AS4C32M16MSA-6BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 54FBGA |
|
70V3569S6BCRenesas Electronics America |
IC SRAM 576KBIT PAR 256CABGA |
|
CY62147DV30L-55BVIRochester Electronics |
STANDARD SRAM, 256KX16, 55NS |