IC DRAM 256MBIT PAR 54TSOP II
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 256Mb (16M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 166 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 5 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY7C144AV-25AXCFlip Electronics |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
S25FS512SAGMFV013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
CY7C1019D-10VXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY62148VNLL70ZSXIRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
SST25VF040B-50-4I-SAERoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
AT28C010-20EM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32LCC |
|
70V3579S6BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
CYD01S18V-133BBIRochester Electronics |
DUAL-PORT SRAM, 64KX18, 4NS |
|
CY7C1370BV25-133BGCRochester Electronics |
ZBT SRAM, 512KX36, 4.2NS |
|
6116LA20SOGIRochester Electronics |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
AT25512-TH-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8TSSOP |
|
IS42S32800G-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
MX25U2033EZUI-12GMacronix |
IC FLSH 2MBIT SPI/QUAD I/O 8USON |