DUAL-PORT SRAM, 64KX18, 6.5NS
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Synchronous |
Memory Size: | 1.152Mb (64K x 18) |
Memory Interface: | Parallel |
Clock Frequency: | 100 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 6.5 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY7C2663KV18-550BZICypress Semiconductor |
NO WARRANTY |
|
IS43TR16128BL-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
M24256-DFCS6TP/KSTMicroelectronics |
IC EEPROM 256KBIT I2C 8WLCSP |
|
IS61LV256AL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PAR 28TSOP I |
|
S29GL128P10FFI022Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
70T3519S200BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
DS2505PRochester Electronics |
IC EPROM 16KBIT 1-WIRE 6TSOC |
|
THGBMJG9C8LBAU8Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 64GBIT EMMC 153FBGA |
|
MT53E128M32D2DS-053 AIT:A TRMicron Technology |
IC DRAM 4GBIT 1.866GHZ 200WFBGA |
|
MT29RZ4B4DZZMGWD-18I.80C TRMicron Technology |
IC FLASH RAM 4G PAR 162VFBGA |
|
CY7C1470V33-200BZICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
GVT71128D32T-7Rochester Electronics |
IC SRAM 4MBIT 66MHZ |
|
CY7C1520AV18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |