EEPROM, 128X16, SERIAL, CMOS
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (128 x 16) |
Memory Interface: | SPI |
Clock Frequency: | 250 kHz |
Write Cycle Time - Word, Page: | 15ms |
Access Time: | - |
Voltage - Supply: | 2.7V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
11AA080-I/TORoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE TO92-3 |
|
MT53D512M32D2DS-053 WT:D TRMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
93C46AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
PC28F320J3F75AFlip Electronics |
IC FLASH 32MBIT PAR 64EASYBGA |
|
TH58BYG3S0HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 8GBIT PARALLEL 63TFBGA |
|
25LC160DT-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
R1QAA7218ABB-20IA0Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
5962-9089904MYARochester Electronics |
FLASH, 128KX8, 120NS, CQCC32 |
|
71256SA20PZRochester Electronics |
SRAM 256K (32K X 8-BIT) |
|
AS4C4M16D1A-5TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |
|
25AA128T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIJ |
|
25LC640T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |
|
MT54W512H36BF-7.5Rochester Electronics |
QDR SRAM, 512KX36, 0.5NS PBGA165 |