IC DRAM 576MBIT PARALLEL 144FBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 576Mb (32M x 18) |
Memory Interface: | Parallel |
Clock Frequency: | 533 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 15 ns |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 144-TFBGA |
Supplier Device Package: | 144-FBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY7C1426KV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
24AA02E48T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY7C4021KV13-600FCXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 361FCBGA |
|
25AA320A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8MSOP |
|
CAT28LV64G20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
71V3576YS150PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S71KS512SC0BHV000Cypress Semiconductor |
IC FLASH RAM 512MBIT PAR 24FBGA |
|
CY7C1312SV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AS4C32M16SB-7TCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
CY7C25632KV18-550BZXICypress Semiconductor |
NO WARRANTY |
|
S29GL01GT11FHB023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
25LC640A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8MSOP |
|
CY62126DV30L-55ZITRochester Electronics |
SRAM CHIP ASYNC SINGLE 3V 1M BIT |