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CY14E116N-Z30XI

CY14E116N-Z30XI

NON-VOLATILE SRAM, 1MX16, 30NS P

CY14E116N-Z30XI

CY14E116N-Z30XI

Image is for reference, please contact us to get the real picture

Part No :

CY14E116N-Z30XI

Manufacturer
Rochester Electronics
Description
NON-VOLATILE SRAM, 1MX16, 30NS P
Catalog
Memory
Availability
10136 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
CY14E116N-Z30XI PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Memory Type:Non-Volatile
Memory Format:NVSRAM
Technology:NVSRAM (Non-Volatile SRAM)
Memory Size:16Mb (1M x 16)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:30ns
Access Time:30 ns
Voltage - Supply:4.5V ~ 5.5V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP I
CY14E116N-Z30XI is available at GangBo-ic.com, Please review product page below for detailed information, including CY14E116N-Z30XI price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for CY14E116N-Z30XI to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

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