EEPROM, 128X16, SERIAL, CMOS
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (256 x 8, 128 x 16) |
Memory Interface: | SPI |
Clock Frequency: | 1 MHz |
Write Cycle Time - Word, Page: | 10ms |
Access Time: | - |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
70V08L20PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
SST39LF402C-55-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CAT25C64VA-1.8Rochester Electronics |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
CY7C1338S-100AXCRochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
CY7C1145LV18-400BZXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
M95512-DRDW8TP/KSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
IS61NLF25636A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S25FL256SDSBHB213Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
24C00T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 128B I2C SOT23-5 |
|
MT57V512H36AF-7.5Rochester Electronics |
DDR SRAM, 512KX36, 3.6NS, CMOS, |
|
M93S56-WMN6TSTMicroelectronics |
IC EEPROM 2KBIT SPI 2MHZ 8SO |
|
S29GL01GT12DHN013Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY62136FV30LL-45BVXIRochester Electronics |
IC SRAM 2MBIT PARALLEL 48VFBGA |