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2SK879-Y(TE85L,F)

2SK879-Y(TE85L,F)

JFET N-CH 0.1W USM

2SK879-Y(TE85L,F)

2SK879-Y(TE85L,F)

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Part No :

2SK879-Y(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
JFET N-CH 0.1W USM
Catalog
Transistors - JFETs
Availability
10444 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
2SK879-Y(TE85L,F) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):-
Drain to Source Voltage (Vdss):-
Current - Drain (Idss) @ Vds (Vgs=0):1.2 mA @ 10 V
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:400 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds:8.2pF @ 10V
Resistance - RDS(On):-
Power - Max:100 mW
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:USM
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