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MMBFJ177LT1G

MMBFJ177LT1G

SMALL SIGNAL FIELD-EFFECT TRANSI

MMBFJ177LT1G

MMBFJ177LT1G

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Part No :

MMBFJ177LT1G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Catalog
Transistors - JFETs
Availability
303027 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 23 - May 27 2024
PDF
MMBFJ177LT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Voltage - Breakdown (V(BR)GSS):30 V
Drain to Source Voltage (Vdss):-
Current - Drain (Idss) @ Vds (Vgs=0):1.5 mA @ 15 V
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V (VGS)
Resistance - RDS(On):300 Ohms
Power - Max:225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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