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HGT1S20N60A4S9A

HGT1S20N60A4S9A

IGBT 600V 70A 290W TO263AB

HGT1S20N60A4S9A

HGT1S20N60A4S9A

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Part No :

HGT1S20N60A4S9A

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 600V 70A 290W TO263AB
Catalog
Transistors - IGBTs - Single
Availability
139313 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
HGT1S20N60A4S9A PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):70 A
Current - Collector Pulsed (Icm):280 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 20A
Power - Max:290 W
Switching Energy:105µJ (on), 150µJ (off)
Input Type:Standard
Gate Charge:142 nC
Td (on/off) @ 25°C:15ns/73ns
Test Condition:390V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
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