REVERSE CONDUCTING IGBT
Type | Description |
---|---|
Series: | BIMOSFET™ |
Package: | Tube |
Part Status: | Active |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 3000 V |
Current - Collector (Ic) (Max): | 38 A |
Current - Collector Pulsed (Icm): | 120 A |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 14A |
Power - Max: | 200 W |
Switching Energy: | - |
Input Type: | Standard |
Gate Charge: | 62 nC |
Td (on/off) @ 25°C: | 40ns/166ns |
Test Condition: | 960V, 14A, 20Ohm, 15V |
Reverse Recovery Time (trr): | 1.4 µs |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IKB20N60TAATMA1Rochester Electronics |
IKB20N60TA - 600V LOW LOSS SWITC |
|
HGTP7N60A4Sanyo Semiconductor/ON Semiconductor |
IGBT 600V 34A TO220-3 |
|
NGB8206ANT4GRochester Electronics |
IGBT, 20A, 390V, N-CHANNEL |
|
IRG6B330UDPBFRochester Electronics |
IRG6B330UD - IGBT WITH ANTI-PARA |
|
SGP20N60HSXKSA1Rochester Electronics |
IGBT, 36A, 600V, N-CHANNEL |
|
RGCL60TS60GC11ROHM Semiconductor |
IGBT |
|
APT50GP60BGRoving Networks / Microchip Technology |
IGBT 600V 100A 625W TO247 |
|
IXGH24N170Wickmann / Littelfuse |
IGBT 1700V 50A 250W TO247AD |
|
RJP60D0DPK-00#T0Renesas Electronics America |
IGBT 600V 45A 140W TO-3P |
|
NGTB20N120IHRWGSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 1200V 40A TO247 |
|
RGPR10BM40FHTLROHM Semiconductor |
IGBT |
|
IKB20N60TATMA1IR (Infineon Technologies) |
IGBT 600V 40A 166W TO263-3 |
|
IGW08T120FKSA1IR (Infineon Technologies) |
IGBT 1200V 16A 70W TO247-3 |