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FGA30N65SMD

FGA30N65SMD

INSULATED GATE BIPOLAR TRANSISTO

FGA30N65SMD

FGA30N65SMD

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Part No :

FGA30N65SMD

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
11102 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
FGA30N65SMD PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):90 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 30A
Power - Max:300 W
Switching Energy:716µJ (on), 208µJ (off)
Input Type:Standard
Gate Charge:87 nC
Td (on/off) @ 25°C:14ns/102ns
Test Condition:400V, 30A, 6Ohm, 15V
Reverse Recovery Time (trr):35 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3PN
FGA30N65SMD is available at GangBo-ic.com, Please review product page below for detailed information, including FGA30N65SMD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FGA30N65SMD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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