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IRG8P50N120KD-EPBF

IRG8P50N120KD-EPBF

IRG8P50N120 - DISCRETE IGBT WITH

IRG8P50N120KD-EPBF

IRG8P50N120KD-EPBF

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Part No :

IRG8P50N120KD-EPBF

Manufacturer
Rochester Electronics
Description
IRG8P50N120 - DISCRETE IGBT WITH
Catalog
Transistors - IGBTs - Single
Availability
17479 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
PDF
IRG8P50N120KD-EPBF PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):105 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 35A
Power - Max:350 W
Switching Energy:2.3mJ (on), 1.9mJ (off)
Input Type:Standard
Gate Charge:315 nC
Td (on/off) @ 25°C:35ns/190ns
Test Condition:600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr):170 ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AD
IRG8P50N120KD-EPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRG8P50N120KD-EPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRG8P50N120KD-EPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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