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GSID100A120T2C1

GSID100A120T2C1

IGBT MOD 1200V 200A 640W

2102502-2

2102502-2

GUIDE PIN KEYED

GSID100A120T2C1

GSID100A120T2C1

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Part No :

GSID100A120T2C1

Manufacturer
SemiQ
Description
IGBT MOD 1200V 200A 640W
Catalog
Transistors - IGBTs - Modules
Availability
866986 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
GSID100A120T2C1 PDF
Type Description
Series:Amp+™
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):200 A
Power - Max:640 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 100A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:13.7 nF @ 25 V
Input:Three Phase Bridge Rectifier
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
GSID100A120T2C1 is available at GangBo-ic.com, Please review product page below for detailed information, including GSID100A120T2C1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for GSID100A120T2C1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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  • GSID100A120T2C1 Price
  • GSID100A120T2C1 Series
  • GSID100A120T2C1 Datasheet
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  • GSID100A120T2C1 Pdf
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  • GSID100A120T2C1 Features
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