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APTM100DA18T1G

APTM100DA18T1G

MOSFET N-CH 1000V 40A SP1

APTM100DA18T1G

APTM100DA18T1G

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Part No :

APTM100DA18T1G

Manufacturer
Microsemi
Description
MOSFET N-CH 1000V 40A SP1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
188018 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
APTM100DA18T1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:216mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:570 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:14800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):657W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SP1
Package / Case:SP1
APTM100DA18T1G is available at GangBo-ic.com, Please review product page below for detailed information, including APTM100DA18T1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for APTM100DA18T1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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