MOSFET P-CH 30V 4.3A TSOT-26
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.8 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 642 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.38W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUXHMF1404ZSTRLIR (Infineon Technologies) |
MOSFET N-CH TO263-3 |
|
NP80N055KLE-E2-AYRenesas Electronics America |
TRANSISTOR |
|
JAN2N6849UMicrosemi |
MOSFET P-CH 100V 6.5A 18ULCC |
|
IRC730PBFVishay / Siliconix |
MOSFET N-CH 400V 5.5A TO220-5 |
|
IXFD80N20Q-8XQWickmann / Littelfuse |
MOSFET N-CHANNEL 200V DIE |
|
RJK03M5DNS-WS#J5Renesas Electronics America |
IGBT |
|
NP48N055KHE-E1-AYRenesas Electronics America |
TRANSISTOR |
|
APTC60DAM24CT1GMicrosemi |
MOSFET N-CH 600V 95A SP4 |
|
IRF6892STR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 28A DIRECTFET |
|
IRFC4468DIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
IPC60R070CFD7X7SA1IR (Infineon Technologies) |
MOSFET N-CH HI POWER WAFER |
|
5HP01C-TB-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 70MA SMD |
|
IRF6100PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 5.1A 4FLIPFET |