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IRFH5302DTRPBF

IRFH5302DTRPBF

MOSFET N-CH 30V 29A/100A PQFN

IRFH5302DTRPBF

IRFH5302DTRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRFH5302DTRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 29A/100A PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17490 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
IRFH5302DTRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3635 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (5x6) Single Die
Package / Case:8-PowerVDFN
IRFH5302DTRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFH5302DTRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH5302DTRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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