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2SK2719(F)

2SK2719(F)

MOSFET N-CH 900V 3A TO3P

DEMMK9S

DEMMK9S

CONN D-SUB RCPT 9POS PNL MNT

2SK2719(F)

2SK2719(F)

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Part No :

2SK2719(F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 900V 3A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
887088 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
2SK2719(F) PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3
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