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FQI3P50TU

FQI3P50TU

MOSFET P-CH 500V 2.7A I2PAK

FQI3P50TU

FQI3P50TU

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Part No :

FQI3P50TU

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 500V 2.7A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
536253 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
FQI3P50TU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI3P50TU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI3P50TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI3P50TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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